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• New DRAM circuit design approach for gigabit-era DRAM .
• Integrated statistical method enabling quantitative evaluation of DRAM quality.
• Technology scaling at the gigabit-era introduces large fluctuations in device parameters that seriously degrade DRAM(*1) circuit performance, and it will become increasingly difficult to design a high performance circuit using conventional design methods. The concordant technique developed provides a design guideline in achieving required levels of circuit performance and will be indispensable tool for designing high-quality gigabit-era DRAM.
• , DRAM is embedded in a wide range of essential information devices in our daily lives. To continue to improve these devices, it is also necessary to continue to enhance DRAM performance and lower its costs. In the past, this has been achieved by scaling-down the transistors in the DRAM to develop high-speed and low-voltage operation technology. ... Thus, in DRAM circuit design, it is crucial for designers to be able to precisely estimate the worst-case noise levels and ensure a sufficiently high read-out signal voltages.
• As parameter fluctuations increase, however, it becomes increasingly difficult to obtain a high-performance DRAM chip with a sufficiently high readout signal voltage based on the "worst-case design" scenario. ...
• In response to these issues, Hitachi and Elpida devised a new DRAM design method based on a statistical model which more accurately generates the noise distributions of device parameters. Features of the new DRAM design method are described below:.
• A DRAM chip was designed using this new approach and the total number of failed bits were calculated, and compared with the actual number of failed bits of a DRAM chip fabricated with the same parameters. ...
• (*1) Dynamic Random Access Memory (DRAM): Random access (read/write) memory which requires a periodic refresh operation to maintain data. ...
• is a manufacturer of Dynamic Random Access Memory (DRAM) silicon chips with headquarters based in Tokyo, Japan, and sales and marketing operations located in Japan, North America, Europe and Asia. ... Elpida offers a broad range of leading-edge DRAM products for high-end servers, mobile phones, digital television sets and digital cameras as well as personal computers. ...

• Date Prev Date Next Thread Prev Thread Next Date Index Thread Index DRAM.
• Subject: DRAM .
• EDO DRAM is getting hard to find and Distributors keep trying to persuade me that I should really be trying to design in SDRAM. However 5V EDO DRAM is fairly readily available at sensible cost in the form of 72 pin Simms. ...
• Next by Date: RE: DRAM .
• Next by thread: RE: DRAM .

• This page is outdated, but an excellent article that summarizes the available DRAM technology as of late 2001 can be found in IEEE Transactions on Computers, Volume 50, Issue 11, Nov. ... It provides some background on how many DRAM standards work, and provides an extensive set of benchmarks comparing their impact upon a processor's performance. ...
• FPM DRAM, EDO DRAM, CDRAM, EDRAM, RDRAM, SDRAM, SGRAM, VRAM, WRAM, SRAM, SSRAM, SIMM, DIMM, DIP.
• As a note from someone watching on the sidelines, the recent crash in DRAM prices indicates just how much DRAM manufacturers were inflating their prices. Even though DRAM prices dropped from upwards of $30 a Meg to around $5 a Meg, DRAM manufacturers are still making a small profit! A number of market factors were driving toward this crash; some of it is because the introduction of EDO and SDRAM forced FPM prices down to remain competitive, and some if it is because of the burgeoning demand for DRAM as new OSes and applications become less efficient and start chomping up more memory. ... The DRAM market tends to be very elastic and prices volatile. ...
• DRAM.
• So, just what is DRAM? DRAM stands for:.
• The fundamental element of a DRAM is a single capacitor-transistor element which stores 1 bit of information:.
• DRAM arrays use special amplifiers, called sense amps, to detect the state of the capacitor. ... DRAM cells are so sensitive that stray alpha particles can induce errors (called soft errors by DRAM mfgs). I once heard that some nuclear scientists were using a massive array of DRAM chips as particle detectors! When designing with DRAM, keep in mind that it is primarily an analog part, and is quite sensitive to noise and power supply fluctuations.
• Here is a block diagram of a typical, bare-bones DRAM array (1Megx4 FPM):.
• This DRAM supports automatic refresh. ...
• This particular DRAM requires 1024 refresh cycles in 16 ms standard, 128 ms extended. ...
• Now that the basic DRAM structure has been introduced, I will discuss what makes the different flavors of DRAM significant. ...

• The following is a slide presentation given by Changhyun Kim of Samsung Electronics on Basic Dram Operation. Also included are two slides from his ISSCC presentation on a 1-GB DRAM. ...
• Multiplexed addressing contributes to the slowness of DRAM. ...
• The cell type used in DRAM is company dependent. ...
• The 1 GB DRAM from Samsung used 1. ...
• tRAC for the 1 GB Dram is 31 ns. ...
• Slower SRAMs have 20 ns access time, so a fast DRAM could be compatible with a slow SRAM. ...
• A DRAM without a muxing scheme could have the same performance as an SRAM. ...
• Packaging size of SRAM to DRAM is 5:1 because of more I/O on the SRAM. ...
• The package size for the 1 GB DRAM is 2 cm x 3 cm. ...
• The 1 GB DRAM is biased to -1 Volts. ...
• One of the worries in adding logic to a DRAM is power consumption. ... DRAM is very susceptible to noise. ...
• Embedded logic in DRAM would be good for high performance chips. ...

• DRAM 2000. ...
• Oasis Title: APPREC OF DRAM ART. ...
• DRAM 2010. ...
• DRAM 2040. ...
• DRAM 2050. ...
• DRAM 2060. ...
• DRAM 2100H. ...
• Not open to students with credit in DRAM 2000. ...
• DRAM 2110. ...
• DRAM 2120. ...
• DRAM 2121H. ...
• Not open to students with credit in DRAM 2120. ...
• DRAM 2130. ...
• DRAM 2131H. ...
• Not open to students with credit in DRAM 2130. ...
• DRAM 3020. ...

• DRAM ==>.
• <storage> (DRAM) A type of semiconductor memory in which the information is stored in capacitors on a MOS integrated circuit. ... Despite this inconvenience, the DRAM is a very popular memory technology because of its high density and consequent low price. ...
• The first commercially available DRAM chip was the Intel 1103, introduced in 1970. ...
• The early DRAM chips up to a 16k x 1 (16384 locations of one bit each) model needed 3 supply voltages (+5V, -5V and +12V). ...
• To reduce the pin count, thereby helping miniaturisation, DRAMs generally had a single data line which meant that a computer with an N bit wide data bus needed a "bank" of (at least) N DRAM chips. ...
• Beginning with the 256 kilobit DRAM, a tendency toward surface mount packaging arose and DRAMs with more than one data line appeared (e. ... This trend has continued and DRAM chips with up to 36 data lines are available today. ...
• DRAM bit cells are arranged on a chip in a grid of rows and columns where the number of rows and columns are usually a power of two. ...
• Many varieties of DRAM exist today. ...
• Current DRAM's have Row Access Times of 50-100 ns and Column Access Times of 15-40 ns. ...
• Therefore, DRAM chips are usually preferred when (because of the required memory size) the additional cost for the control logic is outweighed by the lower price. ...
• Nibble Mode DRAM can supply four successive bits on one data line by clocking the CAS\ line. ...
• Page Mode DRAM is a standard DRAM where any number of accesses to the currently open row can be made while the RAS signal is kept active. ...
• Static Column DRAM is similar to Page Mode DRAM, but to access different bits in the open row, only the column address needs to be changed while the CAS\ signal stays active. ...
• Extended Data Out DRAM (EDO DRAM) can continue to output data from one address while setting up a new address, for use in pipelined systems. ...

• DRAM Computer memory device in the form of a silicon chip commonly used to provide the immediate-access memory of microcomputers. DRAM loses its contents unless they are read and rewritten every 2 milliseconds or so. ... DRAM is slower but cheaper than SRAM, an alternative form of silicon-chip memory.
• Related Links Dictionary of Computers - DRAM Dictionary of Computers - SRAM SRAM ROM Dictionary of Computers - S NEW Brain Teaser Try our second Mensa brain teaser - can you beat our champion? .

• Reducing DRAM Access Latency.
• If the effects of processing improvements are accounted for, it is found that DRAM latency is approximately proportional to chip size. ...
• In this report, DRAM research from recent years is surveyed, the causes of latency are examined, along with techniques that have been developed to reduce latency. ...
• Trends in DRAM.
• In beginning a report on DRAM, it is perhaps appropriate to present once again the most often cited observation about DRAM's. ... Figure 1 plots the growth of capacity for the DRAM's surveyed in this report. ...
• Evolution of DRAM capacity.
• Figure 2 plots the evolution of DRAM latency over the same period of time. Note that while DRAM capacity has increased exponentially, DRAM latency has remained basically unchanged. ...
• Evolution of DRAM access latency.
• Figure 3 shows the DRAM latency as a function of capacity. The latency also appears to be quite insensitive to DRAM capacity. ...
• DRAM capacity.
• Clearly the exponential growth of DRAM capacity is maintained by increasing die size and improving lithography. ...
• DRAM capacity.
• DRAM capacity.

• Lucent Technologies and NEC announce embedded-DRAM agreement. ...
• and Tokyo, Japan) -- Lucent Technologies' Microelectronics Group and NEC Corporation today announced an agreement for embedded dynamic random access memory (DRAM), which enables DRAM to be combined with logic circuits in application-specific integrated circuits (ASICs). ...
• Under the agreement, NEC will provide embedded DRAM cell designs from its ASIC library, enabling Lucent to offer DRAM as well as static random access memory (SRAM) and flash memory within its ASIC solutions. NEC will manufacture the ASICs with embedded-DRAM using a unique modular process technology at the 0. ...
• "By putting DRAM and logic together on the same chip, we offer design engineers a new capability in tackling their system-level design challenges," said Lucent Technologies' Microelectronics Group Integrated Circuits Vice President Ahmed Nawaz. "Engineers may find embedded DRAM useful in circuits that perform demanding tasks such as routing high-speed data or processing large graphic images. ...
• "NEC's strength in developing such advanced logic products coupled with our prowess in designing and manufacturing logic and DRAM, make us well-suited to work with Lucent," said Hajime Sasaki, Senior Executive Vice President at NEC. ...
• Embedding DRAM on a logic circuit supports the trend toward systems-on-a-chip, which combine several different functions on a single chip to help designers make computers, communications systems and consumer electronic products smaller, more powerful, and energy efficient. ... With separate DRAM, designers are forced to use memory in configurations of 16 megabits. Embedded DRAM also alleviates signal delays often encountered when memory and logic functions are deployed in separate chips on a circuit board. ...
• Recent advances in design and process technology allow the two to be combined in the same silicon without the compromises in performance that have plagued previous efforts to embed DRAM with logic. ...
• NEC began developing embedded DRAM with logic circuitry in 1994 using a 0. ...

• EDO DRAM.
• Extended Data Out DRAM comes in 70ns, 60ns and 50ns speeds. ... EDO DRAM doesn't demand that the column be deactivated and the output buffer turned off before the next data transfer starts. It therefore achieves a typical burst timing of 5-2-2-2 at a bus speed of 66MHz and can complete some memory reads a theoretical 27% faster than FPM DRAM.
• Burst EDO DRAM is an evolutionary improvement in EDO DRAM that contains a pipeline stage and a 2-bit burst counter. With the conventional DRAMs such as FPM and EDO, the initiator accesses DRAM through a memory controller. ... BEDO eliminates the wait-states thus improving system performance by up to 100% over FPM DRAM and up to 50% over standard EDO DRAM, achieving system timings of 5-1-1-1 when used with a supporting chipset.
• Despite the fact that BEDO arguably provides more improvement over EDO than EDO does over FPM the standard has lacked chipset support and has consequently never really caught on, losing out to Synchronous DRAM (SDRAM).
• DRAM.
• FPM DRAM.
• EDO DRAM.
• DDR DRAM.

• Search results for DRAM :.
• NEC Unveils 90-Nanometer Embedded DRAM Technology, March 07, 2005:.
• New ZrO2 Dielectric Material Increases Performance of CMOS-Compatible Embedded DRAM .
• NEC Electronics Corporation today announced its new metal insulator metal (MIM) technology for 90 nanometer embedded DRAM (eDRAM), called MIM2. In addition, to meet the technical challenges presented by moving the company's established CMOS-compatible eDRAM technology to a 90 nm process, NEC Electronics, ahead of other vendors, has adopted the use of zirconium oxide (ZrO2), a new dielectric material with a higher-k factor that allows the embedded DRAM's smaller bit cells to retain storage capacitance. ...
• , has produced the world's first DDR3 (double-data-rate) DRAM (dynamic random access memory) prototype chip. The new 512Mb DDR3 DRAM, can process data at the extraordinary rate of 1,066Mbps, and will be available in early 2006. ...
• New DRAM circuit design approach for gigabit-era DRAM, February 16, 2005:.
• Technology scaling at the gigabit-era introduces large fluctuations in device parameters that seriously degrade DRAM circuit performance, and it will become increasingly difficult to design a high performance circuit using conventional design methods. The concordant technique developed provides a design guideline in achieving required levels of circuit performance and will be indispensable tool for designing high-quality gigabit-era DRAM. ...
• , the high quality DRAM manufacturer today announced the signing of a definitive agreement for a long-term strategic alliance will further enhance the competitiveness of the two companies and contribute to the mutual profits. It creates approximately one quarter of world’s second-largest DRAM output. ...
• Samsung to Produce World's Fastest XDR DRAM, January 26, 2005:.
• Samsung Electronics, the world leader in advanced memory technology, announced that it has begun mass producing 256Mb XDR (short for "eXtreme Data Rate") DRAM, a next-generation memory device for multimedia applications. ...
• Samsung Electronics, the world leader in advanced memory technology, today announced that it has completed the world's first working prototype of a 512Mb mobile DRAM device that operates up to 333Mbps, transmitting 32 bits of data simultaneously. ...

• A DRAM renaissance?.
• The DRAM industry may be on the road to recovery, market researcher Garter said Tuesday. ...
• Manufacturers of DRAM, or dynamic random access memory, have begun raising prices due to a combination of lower inventories and increased optimism sparked by an increase in PC sales. PCs use DRAM to store data. ...
• Because of these increases, Gartner predicts that the worldwide DRAM market will post revenue of $5. ...
• The DRAM market saw worldwide revenue increase by just a fraction year over year to $3. ...
• Rising DRAM prices could boost the fortunes of Samsung, Micron Technology, Infineon, Hynix and others. ... DRAM price declines have led to a major consolidation in the industry as companies got out of the market or tried to stem huge losses. ...
• A recovery in DRAM, however, would put pressure on PC manufacturers. To maintain profit margins, PC makers may be forced to change how they configure their newest PC models to adjust for more expensive DRAM, analysts have said. ...
• If the cost for DRAM exceeds a certain price--usually 8 percent to 10 percent of the bill of materials for a PC--manufacturers may be forced to cut back on the memory allotments offered in new models or to shift other features to compensate. ... Switching to a smaller hard drive, for example, would offset higher DRAM costs and allow a manufacturer to meet its price target. ...
• While rising DRAM prices are a major concern, PC makers such as Dell have pointed out that, so far, overall prices for PC components have continued to decline on average. ...
• Gartner did note that while the price increases are feeding a tentative DRAM recovery, memory manufacturers still face potential pitfalls. ...
• Or DRAM makers--many of which slowed production or shifted to other types of memory during the downturn--could increase DRAM production too quickly, creating an oversupply that torpedoes prices, Gartner said. ...
• "Likewise, if DRAM manufacturers increase production ahead of plan, owing to improving market conditions, the market could be pushed to oversupply earlier than predicted. ...

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